Publications

  • Ho-Young Cha, Y. C. Choi, L. F. Eastman, and M. G. Spencer, “Analytical model of buried-gate SiC MESFETs,” Electronics Letters (Feb, 2004).
  • Ho-Young Cha, Y. C. Choi, A. O. Konstantinov, P. Ericsson, L. F. Eastman, and M. G. Spencer, “Elimination of current instability and improvement of RF performances using Si3N4 passivation in SiC lateral epitaxy MESFETs,” Solid-State Electron. (accepted).
  • Ho-Young Cha, Y. C. Choi, R. M. Thompson, V. Kaper, J. R. Shealy, L. F. Eastman, and M. G. Spencer, “Influence of Si3N4 passivation on surface trapping in SiC metal semiconductor field-effect transistors,” J. Electron Mater (May, 2004).
  • Ho-Young Cha, Y. C. Choi, Lester F. Eastman, A. O. Konstantinov, C. I. Harris, P. Ericsson, M. G. Spencer, “The effects of surface passivation treatments on large signal characteristics of SiC MESFETs in class A and class B operations,” the Spring MRS Conference, San Francisco, April 2004.
  • Ho-Young Cha, C. I. Thomas, L. F. Eastman, and M. G. Spencer, “Gate field emission induced breakdown in power SiC MESFETs,” IEEE Electron Device Lett., vol. 24, no. 9, pp571-573, 2003.
  • Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer, “Reduced trapping effects and improved electrical performance in buried gate 4H-SiC MESFETs,” IEEE Trans. on Electron Dev., vol. 50, no. 7, pp1569-1574, 2003.
  • Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer, “Passivation effect on Channel Recessed 4H-SiC MESFETs,” Materials Science Forum, vol. 433-436, pp749-752, 2003.
  • Koley, G.; Kim, H.; Eastman, L. F.; Spencer, M. G.. Electrical bias stress related degradation of AlGaN/GaN HEMTs. Electronics Letters (2003), 39(16), 1217-1218.
  • Eshun, E. E.; Spencer, M. G.; Griffin, James; Zhou, Peizen; Harris, Garry L. Study of SiC polytype heterojunctions. Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2003), B98(1), 65-69.
  • Neuburger, M.; Daumiller, I.; Zimmermann, T.; Kunze, M.; Koley, G.; Spencer, M. G.; Dadgar, A.; Krtschil, A.; Krost, A.; Kohn, E. Surface stability of InGaN-channel based HFETs. Electronics Letters (2003), 39(22), 1614-1616.
  • Ho-Young Cha, C. I. Thomas, L. F. Eastman, and M. G. Spencer, “Influence of surface structure on electrical characteristics in SiC MESFETs,” Device Research Conference, Utah, June, 2003.
  • G. Koley, Ho-Young Cha, L. F. Eastman, and M. G. Spencer, “Effect of SiNx passivation on surface and interface charge instability in AlGaN/GaN heterostructures and HFETs,” the WOCSDICE workshop, Furigen, Switzerland, May, 2003.
  • Jones, K. A.; Derenge, M. A.; Shah, P. B.; Zheleva, T. S.; Ervin, M. H.; Kirchner, K. W.; Wood, M. C.; Thomas, C.; Spencer, M. G.; Holland, O. W.; Vispute, R. D. A comparison of graphite and AlN caps used for annealing ion-implanted SiC. Journal of Electronic Materials (2002), 31(6), 568-575.
  • Koley, G.; Cha, Ho-Young; Thomas, C. I.; Spencer, M. G.. Laser-induced surface potential transients observed in III-nitride heterostructures. Applied Physics Letters (2002), 81(12), 2282-2284.
  • Karagama Y G; Howarth K; Steel P R M; Spencer M G Lobular capillary haemangioma of the nasal vestibule: a rare entity. INTERNATIONAL JOURNAL OF PEDIATRIC OTORHINOLARYNGOLOGY (2002 Oct 21), 66(1), 71-5.
  • Koley, G.; Cha, Ho-Young; Tilak, V.; Eastman, L. F.; Spencer, M. G.. Modulation of surface barrier in AlGaN/GaN heterostructures. Physica Status Solidi C: Conferences and Critical Reviews (2002), 0(1), b 734-b 737.
  • Spencer, M. G.; Palmour, John; Carter, Calvin. Substrate and epitaxial issues for SiC power devices. IEEE Transactions on Electron Devices (2002), 49(5), 940-945.
  • Koley, G.; Tilak, V.; Cha, Ho-Young; Eastman, L. F.; Spencer, M. G.. Surface trapping effects observed in AlGaN/GaN HFETs and heterostructures. Proceedings – IEEE Lester Eastman Conference on High Performance Devices, Newark, DE, United States, Aug. 6-8, 2002 (2002), 470-476.
  • L. A. Lepak, T. Richards, P. Russo, D. Szarowski, J. Turner, M. G. Spencer, Investigation of the filtration properties of collagen membranes on silicon, Materials Research Society Symposium Proceedings, December, 2002.
  • Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer, “The effect of channel recess and passivation on 4H-SiC MESFETs,” the Fall MRS Conference, Boston, MA, December, 2002.
  • G. Koley, Ho-Young Cha, V. Tilak, L. F. Eastman, and M. G. Spencer, “Effect of UV illumination and bias stress on surface barrier in AlGaN/GaN heterostructures,” the Fall MRS Conference, Boston, MA, December, 2002.
  • Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer, “Passivation effect on 4H-SiC MESFETs,” the European Conference on SiC and Related Materials, Linkoping, Sweden, September, 2002.
  • Ho-Young Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer, “Channel recessed 4H-SiC MESFET with FT of 14.5 GHz and FMAX of 40 GHz,” the IEEE Lester Eastman Conference on High Performance Devices, Newark, DE, August, 2002.
  • G. Koley, Ho-Young Cha, V. Tilak, L. F. Eastman, and M. G. Spencer, “Modulation of surface barrier in AlGaN/GaN heterostructures,” the International Workshop on Nitride Semiconductors, Aachen, Germany, July, 2002.
  • Rumyantsev, S.; Levinshtein, M.; Jackson, A. D.; Mohammad, S. N.; Harris, G. L.; Spencer, M. G.; Shur, M. Boron nitride (BN). Properties of Advanced Semiconductor Materials (2001), 67-92.
  • Koley, G.; Spencer, M. G.; Bhangale, H. R. Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy. Applied Physics Letters (2001), 79(4), 545-547.
  • Pau H; De S; Spencer M G; Steele P R Metastatic malignant melanoma of the larynx. JOURNAL OF LARYNGOLOGY AND OTOLOGY (2001 Nov), 115(11), 925-7.
  • Koley, G.; Spencer, M. G.. Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition. Applied Physics Letters (2001), 78(19), 2873-2875.
  • Koley, G.; Spencer, M. G.. Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy. Journal of Applied Physics (2001), 90(1), 337-344.
  • C. I. Thomas, Ho-Young Cha, L. F. Eastman, and M. G. Spencer, “Mesa isolation with good edge acuity by electron cyclotron resonance plasma etching of SiC using Cl2, CH4, Ar, and a resist mask,” Electron Materials Conference, Notre Dame, IN, June, 2001.
  • Webb C J; Porter G; Spencer M G; Sissons G R Cavernous haemangioma of the nasal bones: an alternative management option. JOURNAL OF LARYNGOLOGY AND OTOLOGY (2000 Apr), 114(4), 287-9.
  • Koley, G.; Smart, J.; Shealy, J. R.; Spencer, M. G.. Characterization of dislocations and surface potential in III-V nitride heterostructures. Proceedings – IEEE/Cornell Conference on High Performance Devices, Ithaca, NY, United States, Aug. 7-9, 2000 (2000), 200-206.
  • Goldys, E. M.; Godlewski, M.; Kaminska, E.; Piotrowska, A.; Koley, G.; Spencer, M. G.; Eastman, L. F. Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN. COMMAD 2000 Proceedings, Conference on Optoelectronic and Microelectronic Materials and Devices, Melbourne, Australia, Dec. 6-8, 2000 (2000), 539-542.
  • Sarney, Wendy L.; Salamanca-Riba, L.; Vispute, R. D.; Zhou, P.; Taylor, C.; Spencer, M. G.; Jones, K. A. SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor. Journal of Electronic Materials (2000), 29(3), 359-363.
  • Eshun, Ebenezer; Taylor, Crawford; Diagne, N. Fama; Griffin, James; Spencer, M. G.; Ferguson, Ian; Gurary, Alex; Stall, Rick. The development of resistive heating for the high temperature growth of a-SiC using a vertical CVD reactor. Materials Science Forum (2000), 338-342(Pt. 1, Silicon Carbide and Related Materials, Part 1), 157-160.
  • Sarney, W. L.; Salamanca-Riba, L.; Zhou, P.; Taylor, C.; Spencer, M. G.; Vispute, R. D.; Jones, K. A. The effect of Ge on the structure & morphology of SiC films grown on (111) Si substrates.Materials Science Forum (2000), 338-342(Pt. 1, Silicon Carbide and Related Materials, Part 1), 277-280.